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[Analysis Case] Investigation of Rust Formation Causes on Gear Surface

[Analysis Case] Investigation of Rust Formation Causes on Gear Surface

Investigate the relationship with the cleaning solution used in the project! Concentrate the cleaning solution and analyze it using the transmission method of micro FT-IR!

We would like to introduce the investigation we conducted on the causes of rust formation on gear surfaces. Rust occurred during the gear manufacturing process. We investigated the relationship with the cleaning solution used in the process. By concentrating the cleaning solution and analyzing it using the transmission method of micro FT-IR, we found that the positions of the total infrared absorption bands of the organic matter in the rusted areas of the gear (tooth tips and sides) matched the positions of the infrared absorption bands of the cleaning solution. Additionally, we conducted energy dispersive X-ray analysis on the inorganic components and detected the same elements. 【Case Summary】 ■ Investigation Material: Rust occurrence in the gear manufacturing process, investigating the relationship with the cleaning solution used in the process ■ Cleaning Components: Concentrated the cleaning solution and analyzed it using the transmission method of micro FT-IR ■ Analysis of Rusted Areas of the Gear ■ Results - The positions of the total infrared absorption bands of the organic matter in the rusted areas of the gear (tooth tips and sides) matched the positions of the infrared absorption bands of the cleaning solution. - Conducted energy dispersive X-ray analysis on the inorganic components and detected the same elements. *For more details, please refer to the related links or feel free to contact us.

  • Analytical Equipment and Devices
  • Other environmental analysis equipment
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[Analysis Case] Quantification of Interstitial Atom Concentration in Silicon Single Crystals

[Analysis Case] Quantification of Interstitial Atom Concentration in Silicon Single Crystals

Quantitative analysis of interstitial oxygen and carbon concentration non-destructively using infrared absorption method.

It is possible to non-destructively determine the interstitial oxygen and carbon atom concentrations in silicon single crystals using FT-IR analysis. The concentrations are calculated from the peak heights of the absorption due to interstitial oxygen or carbon in the spectra measured by the transmission method. The calculation method is standardized by the Japan Electronics and Information Technology Industries Association (JEITA). Below are examples of calculated interstitial oxygen atom concentrations.

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Quantification of Hydrogen Bonding States in SiN Films

Quantification of Hydrogen Bonding States in SiN Films

Quantification of Si-H and N-H in SiN films using infrared absorption method.

It is possible to determine the concentrations of Si-H and N-H in SiN films through FT-IR analysis. Although it is also possible to determine hydrogen concentration using analyses such as SIMS, this provides the total hydrogen concentration and does not allow for the separate determination of hydrogen bonded to Si and hydrogen bonded to N. In FT-IR, the Si-H stretching vibration and N-H stretching vibration have peaks at different positions, allowing us to use these peaks to determine the respective hydrogen concentrations. Below are examples of analyses that determined the concentrations of Si-H and N-H in SiN films on Si substrates.

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